D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8 BGR420 NPN Silicon RF Transistor With Bias Circuitry S m a l l S i g n a l D i s c r et e s Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany (c) Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGR420 BGR420, NPN Silicon RF Transistor With Bias Circuitry Revision History: 2008-06-06, Rev. 1.0 Prevision History: no previous version Page Subjects (major changes since last revision) Trademarks SIEGET(R) is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 1.0, 2008-06-06 BGR420 NPN Silicon RF Transistor With Bias Circuitry* 1 NPN Silicon RF Transistor With Bias Circuitry* Features * Noise figure NF = 1.5 dB at 0.4 GHz * Gain S21 = 26 dB at 0.4 GHz * On chip bias circuitry, 13 mA bias current at VCC = 3.6 V; VBB = 2.8 V * SIEGET (R) 25 GHz fT-Line * Pb-free (RoHS compliant) package 3 4 * Short term description 2 1 Applications * LNAs 2 Description The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing. Type Package Marking BGR420 SOT343 AWs Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution! 9%% 5E N2KP 5)287 9&& 5F 2KP 5),1 5E N2KP *1' %*5BFLUFXLWBGLDJUDP Figure 1 Circuit diagram Note: Due to design there is an additional diode between emitter and collector, which does not affect normal operation for common emitter configuration. Data Sheet 4 Rev. 1.0, 2008-06-06 BGR420 Description Table 1 Pinning table Pin Function 1 RFIN 2 GND 3 RFOUT (VCC) 4 VBB 2.1 Maximum Ratings Note: All Voltages refer to GND-node Table 2 Maximum ratings Parameter Symbol Value Unit Current at pin VCC ICC VCC IBB VBB IIN VIN Ptot 25 mA 13 V 2.2 mA 8 V 3 mA Tjo Voltage at pin VCC Current at pin VBB Voltage at pin VBB Current at pin RFIN Voltage at pin RFIN 5 V 120 mW -65... 150 C Storage junction temperature range Tjstg -65... 150 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb C Total power dissipation1) TS = 115 C Operation junction temperature range Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions 2.2 Thermal Resistance Table 3 Thermal Resistance Parameter Symbol Value 1) Junction - soldering point RthJS 290 1) For calculation of RthJA please refer to Application Note Thermal Resistance. Data Sheet 5 Unit K/W Rev. 1.0, 2008-06-06 BGR420 Electrical Characteristics 3 Electrical Characteristics Table 4 DC characteristics at TA = 25 C, unless otherwise specified Parameter Symbol VCC-GND cutoff current ICC Current at pin VCC ICC Values Min. Table 5 Typ. 7 13 Unit Note / Test Condition 10 A 20 mA VCC = 13 V, IBB = 0, VIN = 0 VBB = 2.8 V, IIN = 0, VCC = 3.6 V Max. AC characteristics (measured in test circuit Figure 2; verified by random sampling) TA = 25 C, VBB = 2.8 V, VCC = 3.6 V, Z0 = 50 , unless otherwise specified Parameter Symbol Values Min. Typ. Unit Note / Test Condition f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz Max. Insertion power gain S21 26.0 15.5 dB Reverse isolation S12 -32.5 -23.4 dB Noise figure, ZS = ZSopt NF 1.5 1.7 dB Third order intercept point at the output1) OIP3 21 23 dBm 1 dB compression point at the output OP-1dB 5.5 7.4 dBm Return loss input S11 -7.3 -11 dB Return loss output S22 -2.5 -9.5 dB 1) OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz. 9&& 9%% %LDV7 5)287 Q) S) QRWFRQQHFWHG 5),1 %LDV7 *1' Figure 2 Data Sheet %*5BFLUFXLWBWHVW BGR420 test circuit 6 Rev. 1.0, 2008-06-06 BGR420 Package Information 4 Package Information 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 3 Package Outline SOT343 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 4 Footprint of SOT343 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 5 Data Sheet Tape of SOT343 7 Rev. 1.0, 2008-06-06